Resistive random access memory device

ABSTRACT

A memory includes: a first electrode comprising a top boundary and a sidewall; a resistive material layer, disposed above the first electrode, that comprises at least a first portion and a second portion coupled to a first end of the first portion, wherein the resistive material layer presents a variable resistance value; and a second electrode disposed above the resistive material layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation Application of U.S. patentapplication Ser. No. 16/378,299, filed Apr. 8, 2019, which is aContinuation Application of U.S. patent application Ser. No. 15/965,881filed Apr. 28, 2018, which claims priority to U.S. Provisional PatentApplication No. 62/592,207, filed on Nov. 9, 2017, which is incorporatedby reference herein in its entirety.

BACKGROUND

In recent years, unconventional nonvolatile memory (NVM) devices, suchas ferroelectric random access memory (FRAM) devices, phase-changerandom access memory (PRAM) devices, and resistive random access memory(RRAM) devices, have emerged. In particular, RRAM devices, which exhibita switching behavior between a high resistance state and a lowresistance state, have various advantages over conventional NVM devices.Such advantages include, for example, compatible fabrication steps withcurrent complementary-metal-oxide-semiconductor (CMOS) technologies,low-cost fabrication, a compact structure, flexible scalability, fastswitching, high integration density, etc.

As integrated circuits (ICs), which include such RRAM devices, becomemore powerful, it is desirable to maximize the number of the RRAMdevices in the IC accordingly. Generally, an RRAM device includes a topelectrode (e.g., an anode) and a bottom electrode (e.g., a cathode) witha variable resistive material layer interposed therebetween. Inparticular, an active area of the variable resistive material layertypically extends in parallel with the top and bottom electrodes,respectively. Forming the RRAM device in such a stack configuration thateach layer can only extend two-dimensionally may encounter a trade-offbetween maximizing the number of the RRAM devices in the IC andmaintaining optimal performance of the RRAM device. For example, thenumber of the RRAM devices is typically proportional to a number of theactive areas of the variable resistive material layers. As such, withina given area of the IC, when the number of the RRAM devices isincreased, the active area of each of the RRAM device shrinks, which maydisadvantageously impact respective performance of each of the RRAMdevices due to weaker signal coupling between respective top and bottomelectrodes.

Thus, existing RRAM devices and methods to make the same are notentirely satisfactory.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIGS. 1A and 1B illustrate a flow chart of an exemplary method forforming a semiconductor device, in accordance with some embodiments.

FIGS. 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 2I, 2J, 2K, 2L, 2M, 2N, 2O, and 2Pillustrate cross-sectional views of an exemplary semiconductor deviceduring various fabrication stages, made by the method of FIG. 1, inaccordance with some embodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, the formation of a first featureover or on a second feature in the description that follows may includeembodiments in which the first and second features are formed in directcontact, and may also include embodiments in which additional featuresmay be formed between the first and second features, such that the firstand second features may not be in direct contact. In addition, thepresent disclosure may repeat reference numerals and/or letters in thevarious examples. This repetition is for the purpose of simplicity andclarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure provides various embodiments of a novel RRAMdevice and methods to form the same. In some embodiments, the disclosedRRAM device includes an RRAM resistor including a reverse U-shapedvariable resistive material layer that includes a first boundary (e.g.,a concave lower boundary) coupled to a bottom electrode and a secondboundary (e.g., a convex upper boundary) coupled to a top electrode,respectively. More specifically, the first boundary of the reverseU-shaped variable resistive material layer may surround at least anupper portion of the bottom electrode, while the second boundary of thereverse U-shaped variable resistive material layer may be coupled to abottom boundary of the top electrode. Forming such a reverse U-shapedvariable resistive material layer in the RRAM resistor may providevarious advantages. For example, when compared to the aforementionedconventional RRAM device, within a given area, forming the variableresistive material layer in the reverse U-shaped profile maysubstantially increase an active area of the variable resistive materiallayer that can be coupled to the top and bottom electrodes.Alternatively stated, when making an IC to integrate plural disclosedRRAM devices, the above-mentioned trade-off between the performance andthe number of RRAM devices that can be integrated may be advantageouslyeliminated.

FIGS. 1A and 1B illustrate a flowchart of a method 100 to form asemiconductor device according to one or more embodiments of the presentdisclosure. It is noted that the method 100 is merely an example, and isnot intended to limit the present disclosure. In some embodiments, thesemiconductor device is, at least part of, an RRAM device. As employedby the present disclosure, the RRAM device refers to any deviceincluding a variable resistive material layer. It is noted that themethod 100 of FIGS. 1A and 1B does not produce a completed RRAM device.A completed RRAM device may be fabricated using complementarymetal-oxide-semiconductor (CMOS) technology processing. Accordingly, itis understood that additional operations may be provided before, during,and after the method 100 of FIGS. 1A and 1B, and that some otheroperations may only be briefly described herein. In some otherembodiments, the method may be used to form any of a variety ofnonvolatile memory (NVM) devices, such as ferroelectric random accessmemory (FRAM) devices, phase-change random access memory (PRAM) devices,resistive random access memory (RRAM) devices, etc., while remainingwithin the scope of the present disclosure.

Referring first to FIG. 1A, in some embodiments, the method 100 startswith operation 102 in which a substrate including a transistor isprovided. The method 100 continues to operation 104 in which a firstdielectric layer is formed over the substrate. In some embodiments, thefirst dielectric layer is formed over the transistor. In someembodiments, the first dielectric layer may be an inter-metal dielectriclayer, which is formed over the substrate with one or more suchinter-metal dielectric layers disposed therebetween, as will bediscussed in further detail below. The method 100 continues to operation106 in which a hole extending through the first dielectric layer isformed. In some embodiments, the hole may expose a portion of at leastone conductive feature (e.g., a drain, a source, a gate, etc.) of thetransistor. Alternatively stated, the hole may be in communication withthe at least one conductive feature of the transistor. The method 100continues to operation 108 in which a first capping layer is formed overthe first dielectric layer. In some embodiments, the first capping layerlines the hole extending through the first dielectric layer, and extendsalong an upper boundary of the first dielectric layer. The method 100continues to operation 110 in which a metal layer is formed over thefirst capping layer. In some embodiments, the metal layer overlays theupper boundary of the first capping layer and fills the hole.

Next, the method 100 continues to operation 112 in which a firstelectrode is formed. In some embodiments, the first electrode is formedof the metal layer that fills the hole, which will be discussed below.The method 100 continues to operation 114 in which an upper portion ofthe first dielectric layer is recessed. Alternatively stated, a newupper boundary of the first dielectric layer is formed, which exposes anupper portion of the first electrode and an upper portion of the firstcapping layer that extends along an upper sidewall of the firstelectrode. The method 100 continues to operation 116 in which a lowercapping layer is formed. In some embodiments, such a lower cappinglayer, which may be formed of a substantially similar material as thefirst capping layer, may overlay the new upper boundary of the firstdielectric layer and an exposed upper boundary of the first electrode.As such, in addition to overlaying the new upper boundary of the firstdielectric layer, the first capping layer and the lower capping layerthat are integrally formed as a single piece may line the firstelectrode, which will be discussed below. The method 100 continues tooperation 118 in which a first electrode layer is formed over the firstcapping layer.

Referring then to FIG. 1B, the method 100 continues to operation 120 inwhich a variable resistive material layer is formed over the firstelectrode layer. The method 100 continues to operation 122 in which asecond electrode layer is formed over the variable resistive materiallayer. The method 100 continues to operation 124 in which a secondcapping layer is formed over the second electrode layer. In someembodiments, the first capping layer, the first electrode layer, thevariable resistive material layer, the second electrode layer, and thesecond capping layer are each substantially conformal and thin. As such,the first capping layer, the first electrode layer, the variableresistive material layer, the second electrode layer, and the secondcapping layer may each follow a profile of the exposed upper portion ofthe first electrode (i.e., each forming a reverse U-shaped profile),which will be discussed in further detail below. The method 100continues to operation 126 in which the first capping layer, the firstelectrode layer, the variable resistive material layer, the secondelectrode layer, and the second capping layer are patterned. In someembodiment, after the patterning, the respective reverse U-shapedprofiles of the first capping layer, the first electrode layer, thevariable resistive material layer, the second electrode layer, and thesecond capping layer may remain unchanged. The method 100 continues tooperation 128 in which spacers are formed. In some embodiments, thespacers are disposed at respective sides of the patterned firstelectrode layer, variable resistive material layer, second electrodelayer, and second capping layer. The method 100 continues to operation130 in which a second dielectric layer is formed over the firstdielectric layer. In some embodiments, the first and second dielectriclayers may be formed of a substantially identical material, which causesthe first and second dielectric layers to be referred to as a singletier. The method 100 continues to operation 132 in which a secondelectrode is formed. In some embodiments, the second electrode is formedto extend through the second dielectric layer and couple the variableresistive material layer through the second capping and electrodelayers.

In some embodiments, operations of the method 100 may be associated withcross-sectional views of a semiconductor device 200 at variousfabrication stages as shown in FIGS. 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 2I,2J, 2K, 2L, 2M, 2N, 2O, and 2P, respectively. In some embodiments, thesemiconductor device 200 may be an RRAM device. The RRAM device 200 maybe included in a microprocessor, memory cell, and/or other integratedcircuit (IC). Also, FIGS. 2A through 2P are simplified for a betterunderstanding of the concepts of the present disclosure. For example,although the figures illustrate the RRAM device 200, it is understoodthe IC, in which the RRAM device 200 is formed, may include a number ofother devices comprising resistors, capacitors, inductors, fuses, etc.,which are not shown in FIGS. 2A through 2P, for purposes of clarity ofillustration.

Corresponding to operation 102 of FIG. 1A, FIG. 2A is a cross-sectionalview of the RRAM device 200 including a substrate 202 with a transistor204, which is provided at one of the various stages of fabrication,according to some embodiments. Although the RRAM device 200 in theillustrated embodiment of FIG. 2A includes only one transistor 204, itis understood that the illustrated embodiment of FIG. 2A and thefollowing figures are merely provided for illustration purposes. Thus,the RRAM device 200 may include any desired number of transistors whileremaining within the scope of the present disclosure.

In some embodiments, the substrate 202 includes a semiconductor materialsubstrate, for example, silicon. Alternatively, the substrate 202 mayinclude other elementary semiconductor material such as, for example,germanium. The substrate 202 may also include a compound semiconductorsuch as silicon carbide, gallium arsenic, indium arsenide, and indiumphosphide. The substrate 202 may include an alloy semiconductor such assilicon germanium, silicon germanium carbide, gallium arsenic phosphide,and gallium indium phosphide. In one embodiment, the substrate 202includes an epitaxial layer. For example, the substrate may have anepitaxial layer overlying a bulk semiconductor. Furthermore, thesubstrate 202 may include a semiconductor-on-insulator (SOI) structure.For example, the substrate may include a buried oxide (BOX) layer formedby a process such as separation by implanted oxygen (SIMOX) or othersuitable technique, such as wafer bonding and grinding.

In some embodiments, the transistor 204 includes a gate electrode 204-1,a gate dielectric layer 204-2, and source/drain features 204-3 and204-4. The source/drain features 204-3 and 204-4 may be formed usingdoping processes such as ion implantation. The gate dielectric layer204-2 may include a dielectric material such as, silicon oxide, siliconnitride, silicon oxinitride, dielectric with a high dielectric constant(high-k), and/or combinations thereof, which may be formed usingdeposition processes such as atomic layer deposition (ALD). The gateelectrode 204-1 may include a conductive material, such as polysiliconor a metal, which may be formed using deposition processes such aschemical vapor deposition (CVD). As will be discussed in further detailbelow, the transistor 204 may serve as an access transistor of the RRAMdevice 200, which controls an access to a data storage component (e.g.,an RRAM resistor) of the RRAM device 200 during read/write operations.

Corresponding to operation 104 of FIG. 1A, FIG. 2B is a cross-sectionalview of the RRAM device 200 including a first dielectric layer 206,which is formed at one of the various stages of fabrication, accordingto some embodiments. As shown, the first dielectric layer 206 is formedover the transistor 204, and a major surface of the substrate 202. Asmentioned above, the first dielectric layer may be part of aninter-metal dielectric (IMD) layer. Although in the illustratedembodiment of FIG. 2B (and the following figures), the first dielectriclayer 206 directly overlays the substrate 202 and the transistor 204, itis noted that between the first dielectric layer 206 and the substrate202, there may be one or more such IMD layers while remaining within thescope of the present disclosure. Alternatively stated, the firstdielectric layer 206 may be formed during a back-end-of-line (BEOL)process. For purposes of clarity, such one or more IMD layers are notshown in the figures of the present disclosure.

In some embodiments, the first dielectric layer 206 is formed of adielectric material. Such a dielectric material may include at least oneof: silicon oxide, a low dielectric constant (low-k) material, othersuitable dielectric material, or a combination thereof. The low-kmaterial may include fluorinated silica glass (FSG), phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), carbon doped siliconoxide (SiO_(x)C_(y)), strontium oxide (SrO), Black Diamond® (AppliedMaterials of Santa Clara, Calif.), Xerogel, Aerogel, amorphousfluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SiLK (DowChemical, Midland, Mich.), polyimide, and/or other future developedlow-k dielectric materials.

Corresponding to operation 106 of FIG. 1A, FIG. 2C is a cross-sectionalview of the RRAM device 200 including a hole 207 extending through thefirst dielectric layer 206, which is formed at one of the various stagesof fabrication, according to some embodiments. As shown, the hole 207exposes the source/drain feature 204-3 (i.e., the hole 207 is incommunication with the source/drain feature 204-3), which allows a laterformed RRAM resistor to be coupled to the transistor 204 through thesource/drain feature 204-3. As mentioned above, one or more IMD layers(not shown) may be formed between the first dielectric layer 206 and thesubstrate 202 so that the hole 207 may be indirectly in communicationwith the source/drain feature 204-3 through respective conductivefeatures disposed in the one or more IMD layers.

In some embodiments, the hole 207 may be formed by performing at leastsome of the following processes: forming an optional anti-reflectivecoating (ARC) layer over the first dielectric layer 206; forming apatternable layer (e.g., a photoresist layer) with an opening that isaligned with an intended area to form the hole 207; while using thepatternable layer as a mask, performing one or more dry etchingprocesses to etch a portion of the first dielectric layer 206 that isnot covered by the patternable layer; and removing the patternablelayer.

Corresponding to operation 108 of FIG. 1A, FIG. 2D is a cross-sectionalview of the RRAM device 200 including a first capping layer 208, whichis formed at one of the various stages of fabrication, according to someembodiments. As shown, the first capping layer 208 overlays a topboundary 206A of the first dielectric layer 206 and lines the hole 207,i.e., the first capping layer 208 overlaying a bottom boundary andsidewalls of the hole 207.

In some embodiments, the first capping layer 208 may be formed frommaterials such as, for example, gold (Au), platinum (Pt), ruthenium(Ru), iridium (Ir), titanium (Ti), aluminum (Al), copper (Cu), tantalum(Ta), tungsten (W), iridium-tantalum alloy (Ir—Ta), indium-tin oxide(ITO), or any alloy, oxide, nitride, fluoride, carbide, boride orsilicide of these, such as TaN, TiN, TiAlN, TiW, or a combinationthereof. Although the first capping layer 208 is shown as a single layerin the illustrated embodiment of FIG. 2D (and the following figures), itis noted that the first capping layer 208 may include plural layersformed as a stack, wherein each of the plural layers is formed of one ofthe above-described materials, e.g., TaN, TiN, etc. In some embodiments,the first capping layer 208 is formed by using chemical vapor deposition(CVD), plasma enhanced (PE) CVD, high-density plasma (HDP) CVD,inductively-coupled-plasma (ICP) CVD, physical vapor deposition (PVD),spin-on coating, and/or other suitable techniques to deposit the atleast one of the above-described material over the first dielectriclayer 206.

Corresponding to operation 110 of FIG. 1A, FIG. 2E is a cross-sectionalview of the RRAM device 200 including a metal layer 210, which is formedat one of the various stages of fabrication, according to someembodiments. As shown, the metal layer 210 is formed to overlay thefirst capping layer 208, and accordingly fill the hole 207.

In some embodiments, the metal layer 210 may include a conductivematerial such as, for example, copper (Cu), aluminum (Al), tungsten (W),etc. In some embodiments, the metal layer 210 may be formed by usingchemical vapor deposition (CVD), physical vapor deposition (PVD),spin-on coating, and/or other suitable techniques to deposit theabove-described conductive material over the first capping layer 208.

Corresponding to operation 112 of FIG. 1A, FIG. 2F is a cross-sectionalview of the RRAM device 200 including a first electrode 212, which isformed at one of the various stages of fabrication, according to someembodiments. In some embodiments, the first electrode 212 is formed byperforming a polishing process (e.g., a chemical-mechanical polishing(CMP) process) on the metal layer 210 (FIG. 2E) until the upper boundary206A of the first dielectric layer 206 is re-exposed. Thus, it isunderstood that while performing such a polishing process, a portion ofthe first capping layer 208 that overlays the upper boundary 206A isremoved. As such, an upper boundary 212A of the first electrode 212 isexposed, and further, an upper boundary 208A of a portion of the firstcapping layer 208 that extends along a sidewall 212B of the firstelectrode 212 is also exposed.

Corresponding to operation 114 of FIG. 1A, FIG. 2G is a cross-sectionalview of the RRAM device 200 in which an upper portion of the firstdielectric layer 206 is recessed at one of the various stages offabrication, according to some embodiments. After the upper portion ofthe first dielectric layer 206 is recessed, as shown, a new upperboundary 206B of the first dielectric layer 206 is exposed, and further,a sidewall 208B of the portion of the first capping layer 208 thatextends along the sidewall 212B of the first electrode 212 is alsoexposed. Alternatively stated, the first electrode 212 has an upperportion protruding from the new upper boundary 206B and a lower portionstill embedded in the first dielectric layer 206. Moreover, in someembodiments, a corner (i.e., an L-shaped profile) 213 is formed at anintersection of the sidewall 208B and the (new) upper boundary 206B, andmoreover, the upper boundaries 212A/208A and the sidewalls 208B maycooperatively form a reverse U-shaped profile.

In some embodiments, the recession of the upper portion of the firstdielectric layer 206 may be formed by performing at least some of thefollowing processes: forming an optional anti-reflective coating (ARC)layer over the first dielectric layer 206; forming a patternable layer(e.g., a photoresist layer) that covers the first electrode 212 (and theportion of the first capping layer 208 that extends along a sidewall212B of the first electrode 212); while using the patternable layer as amask, performing one or more dry etching processes to etch the upperportion of the first dielectric layer 206 that is not covered by thepatternable layer; and removing the patternable layer.

Corresponding to operation 116 of FIG. 1A, FIG. 2H is a cross-sectionalview of the RRAM device 200 in which a lower capping layer 208′ isformed at one of the various stages of fabrication, according to someembodiments. Since in some embodiments, the lower capping layer 208′ maybe formed as a substantially similar material as the first capping layer208, the lower capping layer 208′ and the first capping layer 208 may beintegrally formed as a one-piece layer (i.e., the interface between suchtwo layers is indistinguishable), which is herein referred to as thefirst capping layer 208 in the following discussions.

In some embodiments, the lower capping layer 208′ is substantiallyconformal and thin (e.g., about 100˜300 A in thickness) so that at leasta portion of the first capping layer 208 may also follow a reverseU-shaped profile 215, which is defined by the upper boundary 212A and anupper portion of the sidewall 212B. As such, in some embodiments, thefirst capping layer 208 includes at least a horizontally extending(lateral) portion 208-1 that extends along the upper boundary 212A ofthe first electrode 212, and two vertically extending (longitudinal)portions 208-2 and 208-3 that respectively extend along the sidewalls212B of the first electrode 212, wherein the two vertically extendingportions 208-2 and 208-3 are respectively coupled to two ends of thehorizontally extending portion 208-1. Further, the first capping layer208 includes two horizontally extending, or “leg” portions 208-4 and208-5 that respectively extend along the upper boundary 206B of thefirst dielectric layer 206, wherein the leg portions 208-4 is coupled tothe vertically extending portion 208-2 at one end of the verticallyextending portion 208-2 that is opposite to the other end to which thehorizontally extending portion 208-1 is coupled, and the leg portions208-5 is coupled to the vertically extending portion 208-3 at one end ofthe vertically extending portion 208-3 that is opposite to the other endto which the horizontally extending portion 208-1 is coupled. It isnoted that the term “vertically extending portion,” as used herein, doesnot necessarily imply a surface of such a vertically extending portionand an intersecting surface form an absolute right angle. For example,each of the vertically extending portions 208-2 and 208-3 and thehorizontally extending portion 208-1 may form an acute or obtuse anglewhile remaining within the scope of the present disclosure.

Corresponding to operation 118 of FIG. 1A, FIG. 2I is a cross-sectionalview of the RRAM device 200 including a first electrode layer 216, whichis formed at one of the various stages of fabrication, according to someembodiments. As shown, the first electrode layer 216 overlays the firstcapping layer 208. Similar as the first capping layer 208, the firstelectrode layer 216 is substantially conformal and thin (e.g., about100˜300 A in thickness) so that at least a portion of the firstelectrode layer 216 may also follow the reverse U-shaped profile 215. Assuch, in some embodiments, the first electrode layer 216 includes atleast a horizontally extending portion 216-1 that extends along theupper boundary 212A of the first electrode 212, and two verticallyextending portions 216-2 and 216-3 that respectively extend along thesidewalls 212B of the first electrode 212, wherein the two verticallyextending portions 216-2 and 216-3 are respectively coupled to two endsof the horizontally extending portion 216-1. Further, the firstelectrode layer 216 includes two horizontally extending, or leg portions216-4 and 216-5 that respectively extend along the upper boundary 206Bof the first dielectric layer 206, wherein the leg portions 216-4 iscoupled to the vertically extending portion 216-2 at one end of thevertically extending portion 216-2 that is opposite to the other end towhich the horizontally extending portion 216-1 is coupled, and the legportions 216-5 is coupled to the vertically extending portion 216-3 atone end of the vertically extending portion 216-3 that is opposite tothe other end to which the horizontally extending portion 216-1 iscoupled.

In some embodiments, the first electrode layer 216 may be formed frommaterials such as, for example, gold (Au), platinum (Pt), ruthenium(Ru), iridium (Ir), titanium (Ti), aluminum (Al), copper (Cu), tantalum(Ta), tungsten (W), iridium-tantalum alloy (Ir—Ta), indium-tin oxide(ITO), or any alloy, oxide, nitride, fluoride, carbide, boride orsilicide of these, such as TaN, TiN, TiAlN, TiW, or a combinationthereof. Although the first electrode layer 216 is shown as a singlelayer in the illustrated embodiment of FIG. 2I (and the followingfigures), it is noted that the first electrode layer 208 may includeplural layers formed as a stack, wherein each of the plural layers isformed of one of the above-described materials, e.g., TaN, TiN, etc. Insome embodiments, the first electrode layer 216 is formed by usingchemical vapor deposition (CVD), plasma enhanced (PE) CVD, high-densityplasma (HDP) CVD, inductively-coupled-plasma (ICP) CVD, physical vapordeposition (PVD), spin-on coating, and/or other suitable techniques todeposit the at least one of the above-described material over the firstcapping layer 208.

Corresponding to operation 120 of FIG. 1B, FIG. 2J is a cross-sectionalview of the RRAM device 200 including a variable resistive materiallayer 218, which is formed at one of the various stages of fabrication,according to some embodiments. As shown, the variable resistive materiallayer 218 overlays the first electrode layer 206. Similar as the firstcapping layer 208 and first electrode layer 216, the variable resistivematerial layer 218 is substantially conformal and thin (e.g., about10˜100 A in thickness) so that at least a portion of the variableresistive material layer 218 may also follow the reverse U-shapedprofile 215. As such, in some embodiments, the variable resistivematerial layer 218 includes at least a horizontally extending portion218-1 that extends along the upper boundary 212A of the first electrode212, and two vertically extending portions 218-2 and 218-3 thatrespectively extend along the sidewalls 212B of the first electrode 212,wherein the two vertically extending portions 218-2 and 218-3 arerespectively coupled to two ends of the horizontally extending portion218-1. Further, the variable resistive material layer 218 includes twohorizontally extending, or leg portions 218-4 and 218-5 thatrespectively extend along the upper boundary 206B of the firstdielectric layer 206, wherein the leg portions 218-4 is coupled to thevertically extending portion 218-2 at one end of the verticallyextending portion 218-2 that is opposite to the other end to which thehorizontally extending portion 218-1 is coupled, and the leg portions218-5 is coupled to the vertically extending portion 218-3 at one end ofthe vertically extending portion 218-3 that is opposite to the other endto which the horizontally extending portion 218-1 is coupled.

In some embodiments, the variable resistive material layer 218 is alayer having a resistance conversion characteristic (e.g. variableresistance). In other words, the variable resistive material layer 218includes material characterized to show reversible resistance variancein accordance with a polarity and/or an amplitude of an appliedelectrical pulse. The variable resistive material layer 218 includes adielectric layer. The variable resistive material layer 218 may bechanged into a conductor or an insulator based on polarity and/ormagnitude of electrical signal.

In one embodiment, the variable resistive layer 218 may include atransition metal oxide. The transition metal oxide maybe denoted asM_(x)O_(y) where M is a transition metal, O is oxygen, x is thetransition metal composition, and y is the oxygen composition. In anembodiment, the variable resistive material layer 218 includes ZrO₂.Examples of other materials suitable for the variable resistive materiallayer 218 include: NiO, TiO₂, HfO, ZrO, ZnO, WO₃, CoO, Nb₂O₅, Fe₂O₃,CuO, CrO₂, SrZrO₃ (Nb-doped), and/or other materials known in the art.In another embodiment, the variable resistive layer 218 may include acolossal magnetoresistance (CMR)-based material such as, for example,Pr_(0.7)Ca_(0.3), MnO₃, etc.

In yet another embodiment, the variable resistive layer 218 may includea polymer material such as, for example, polyvinylidene fluoride andpoly[(vinylidenefluoride-co-trifluoroethylene] (P(VDF/TrFE)). In yetanother embodiment, the variable resistive layer 218 may include aconductive-bridging random access memory (CBRAM) material such as, forexample, Ag in GeSe. According to some embodiments, the variableresistive material layer 218 may include multiple layers havingcharacteristics of a resistance conversion material. A set voltageand/or a reset voltage of the variable resistive material layer 218 maybe determined by the variable resistive material layer 218'scompositions (including the values of “x” and “y”), thickness, and/orother factors known in the art.

In some embodiments, the variable resistive material layer 218 may beformed by an atomic layer deposition (ALD) technique with a precursorcontaining a metal and oxygen. In some embodiments, other chemical vapordeposition (CVD) techniques may be used. In some embodiments, thevariable resistive material layer 218 may be formed by a physical vapordeposition (PVD) technique, such as a sputtering process with a metallictarget and with a gas supply of oxygen and optionally nitrogen to thePVD chamber. In some embodiments, the variable resistive material layer218 may be formed by an electron-beam deposition technique.

Corresponding to operation 122 of FIG. 1B, FIG. 2K is a cross-sectionalview of the RRAM device 200 including a second electrode layer 220,which is formed at one of the various stages of fabrication, accordingto some embodiments. As shown, the second electrode layer 220 overlaysthe variable resistive material layer 218. Similarly, the secondelectrode layer 220 is substantially conformal and thin (e.g., about100˜300 A in thickness) so that at least a portion of the secondelectrode layer 220 may also follow the reverse U-shaped profile 215. Assuch, in some embodiments, the second electrode layer 220 includes atleast a horizontally extending portion 220-1 that extends along theupper boundary 212A of the first electrode 212, and two verticallyextending portions 220-2 and 220-3 that respectively extend along thesidewalls 212B of the first electrode 212, wherein the two verticallyextending portions 220-2 and 220-3 are respectively coupled to two endsof the horizontally extending portion 220-1. Further, the secondelectrode layer 220 includes two horizontally extending, or leg portions220-4 and 220-5 that respectively extend along the upper boundary 206Bof the first dielectric layer 206, wherein the leg portions 220-4 iscoupled to the vertically extending portion 220-2 at one end of thevertically extending portion 220-2 that is opposite to the other end towhich the horizontally extending portion 220-1 is coupled, and the legportions 220-5 is coupled to the vertically extending portion 220-3 atone end of the vertically extending portion 220-3 that is opposite tothe other end to which the horizontally extending portion 220-1 iscoupled.

In some embodiments, the second electrode layer 220 may be formed frommaterials such as, for example, gold (Au), platinum (Pt), ruthenium(Ru), iridium (Ir), titanium (Ti), aluminum (Al), copper (Cu), tantalum(Ta), tungsten (W), iridium-tantalum alloy (Ir—Ta), indium-tin oxide(ITO), or any alloy, oxide, nitride, fluoride, carbide, boride orsilicide of these, such as TaN, TiN, TiAlN, TiW, or a combinationthereof. Although the second electrode layer 220 is shown as a singlelayer in the illustrated embodiment of FIG. 2K (and the followingfigures), it is noted that the second electrode layer 220 may includeplural layers formed as a stack, wherein each of the plural layers isformed of one of the above-described materials, e.g., TaN, TiN, etc. Insome embodiments, the second electrode layer 220 is formed by usingchemical vapor deposition (CVD), plasma enhanced (PE) CVD, high-densityplasma (HDP) CVD, inductively-coupled-plasma (ICP) CVD, physical vapordeposition (PVD), spin-on coating, and/or other suitable techniques todeposit the at least one of the above-described material over thevariable resistive material layer 218.

Corresponding to operation 124 of FIG. 1B, FIG. 2L is a cross-sectionalview of the RRAM device 200 including a second capping layer 222, whichis formed at one of the various stages of fabrication, according to someembodiments. As shown, the second capping layer 222 overlays the secondelectrode layer 220. Similarly, the second capping layer 222 issubstantially conformal and thin (e.g., about 100˜300 A in thickness) sothat at least a portion of the second capping layer 222 may also followthe reverse U-shaped profile 215. As such, in some embodiments, thesecond capping layer 222 includes at least a horizontally extendingportion 222-1 that extends along the upper boundary 212A of the firstelectrode 212, and two vertically extending portions 222-2 and 222-3that respectively extend along the sidewalls 212B of the first electrode212, wherein the two vertically extending portions 222-2 and 222-3 arerespectively coupled to two ends of the horizontally extending portion222-1. Further, the second capping layer 222 includes two horizontallyextending, or leg portions 222-4 and 222-5 that respectively extendalong the upper boundary 206B of the first dielectric layer 206, whereinthe leg portions 222-4 is coupled to the vertically extending portion222-2 at one end of the vertically extending portion 222-2 that isopposite to the other end to which the horizontally extending portion222-1 is coupled, and the horizontally extending portions 222-5 iscoupled to the vertically extending portion 222-3 at one end of thevertically extending portion 222-3 that is opposite to the other end towhich the horizontally extending portion 222-1 is coupled.

In some embodiments, the second capping layer 222 may be formed frommaterials such as, for example, gold (Au), platinum (Pt), ruthenium(Ru), iridium (Ir), titanium (Ti), aluminum (Al), copper (Cu), tantalum(Ta), tungsten (W), iridium-tantalum alloy (Ir—Ta), indium-tin oxide(ITO), or any alloy, oxide, nitride, fluoride, carbide, boride orsilicide of these, such as TaN, TiN, TiAlN, TiW, or a combinationthereof. Although the second capping layer 222 is shown as a singlelayer in the illustrated embodiment of FIG. 2L (and the followingfigures), it is noted that the second capping layer 222 may includeplural layers formed as a stack, wherein each of the plural layers isformed of one of the above-described materials, e.g., TaN, TiN, etc. Insome embodiments, the second capping layer 222 is formed by usingchemical vapor deposition (CVD), plasma enhanced (PE) CVD, high-densityplasma (HDP) CVD, inductively-coupled-plasma (ICP) CVD, physical vapordeposition (PVD), spin-on coating, and/or other suitable techniques todeposit the at least one of the above-described material over the secondelectrode layer 220.

Corresponding to operation 126 of FIG. 1B, FIG. 2M is a cross-sectionalview of the RRAM device 200 in which the first electrode layer 208, thefirst capping layer 216, the variable resistive material layer 218, thesecond electrode layer 220, and the second capping layer 222 arepatterned at one of the various stages of fabrication, according to someembodiments. As shown, subsequently to such a patterning process,respective “leg” portions of the first electrode layer 208, the firstcapping layer 216, the variable resistive material layer 218, the secondelectrode layer 220, and the second capping layer 222 that extend alongthe upper boundary 206B are partially removed (e.g., etched). Moreover,such removed leg portions may be not directly coupled to respectivevertically extending portions (e.g., 208-2/208-3, 216-2/216-3,218-2/218-3, 220-2/220-3, and 222-2/222-3) so that the respectivehorizontally extending portions 208-1, 216-1, 218-1, 220-1, and 222-1and vertically extending portions 208-2/208-3, 216-2/216-3, 218-2/218-3,220-2/220-3, and 222-2/222-3 may remain intact. As such, the patternedfirst electrode layer 208, first capping layer 216, variable resistivematerial layer 218, second electrode layer 220, and second capping layer222 may each still follow the reverse U-shaped profile 215.

In some embodiments, the patterned first electrode layer 208, firstcapping layer 216, variable resistive material layer 218, secondelectrode layer 220, and second capping layer 222 may be formed byperforming at least some of the following processes: forming apatternable layer (e.g., a photoresist layer) covering the respectivehorizontally extending portions 208-1, 216-1, 218-1, 220-1, and 222-1,vertically extending portions 208-2/208-3, 216-2/216-3, 218-2/218-3,220-2/220-3, and 222-2/222-3, and portions of the leg portions208-4/208-5, 216-4/216-5, 218-4/218-5, 220-4/220-5, and 222-4/222-5;while using the patternable layer as a mask, performing one or more dryetching processes to etch portions of the leg portions 208-4/208-5,216-4/216-5, 218-4/218-5, 220-4/220-5, and 222-4/222-5 that are notcovered by the patternable layer; and removing the patternable layer.

Corresponding to operation 128 of FIG. 1B, FIG. 2N is a cross-sectionalview of the RRAM device 200 including spacers 230 which are formed atone of the various stages of fabrication, according to some embodiments.As shown, the spacers 230 are formed to respectively overlay sides ofthe patterned first electrode layer 208, first capping layer 216,variable resistive material layer 218, second electrode layer 220, andsecond capping layer 222 while at least partially exposing an upperboundary 222-1A of the horizontally extending portion 222-1 of thepatterned second capping layer 222. More specifically, the spacers 230may respectively overlay the vertically extending portions 222-2/222-3and remaining leg portions 222-4/222-5, and sidewalls of the remainingleg portions 222-4/222-5 (and 208-4/208-5, 216-4/216-5, 218-4/218-5,220-4/220-5), which are collectively referred to as sidewalls 231.

In some embodiments, the spacers 230 may be formed by performing atleast some of the following processes: forming a dummy dielectric (e.g.,silicon nitride (SiN), silicon carbide (SiC), or the like) layer overthe first dielectric layer 206 and the patterned first electrode layer208, first capping layer 216, variable resistive material layer 218,second electrode layer 220, and second capping layer 222; and performingone or more dry etching processes to etch the dummy dielectric layeruntil the upper boundary 222-1A of the horizontally extending portion222-1 of the patterned second capping layer 222 and the upper boundary206B of the first dielectric layer 206 are re-exposed.

Corresponding to operation 130 of FIG. 1B, FIG. 2O is a cross-sectionalview of the RRAM device 200 including a second dielectric layer 232,which is formed at one of the various stages of fabrication, accordingto some embodiments. As shown, the second dielectric layer 232 is formedto overlay the first dielectric layer 206, the patterned first electrodelayer 208, first capping layer 216, variable resistive material layer218, second electrode layer 220, and second capping layer 222, and thespacers 230. As mentioned above, the first dielectric layer 206 may bepart of an inter-metal dielectric (IMD) layer, and in some embodiments,the second dielectric layer 232 is formed of a substantially identicalmaterial to the first dielectric layer 206. Thus, the first and seconddielectric layer 206/232 may be referred to as a single tier, accordingto some embodiments.

In some embodiments, the second dielectric layer 232 is formed of adielectric material. Such a dielectric material may include at least oneof: silicon oxide, a low dielectric constant (low-k) material, othersuitable dielectric material, or a combination thereof. The low-kmaterial may include fluorinated silica glass (FSG), phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), carbon doped siliconoxide (SiO_(x)C_(y)), strontium oxide (SrO), Black Diamond® (AppliedMaterials of Santa Clara, Calif.), Xerogel, Aerogel, amorphousfluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SiLK (DowChemical, Midland, Mich.), polyimide, and/or other future developedlow-k dielectric materials.

Corresponding to operation 132 of FIG. 1B, FIG. 2P is a cross-sectionalview of the RRAM device 200 including a second electrode 234, which isformed at one of the various stages of fabrication, according to someembodiments. As shown, the second electrode 234 is coupled to at least aportion of the upper boundary 222-1A of the horizontally extendingportion of the second capping layer 222.

In some embodiments, the second electrode 234 is formed by performing aseries of processes substantially similar as the processes to form thefirst electrode 212. For example, the second electrode 231 may be formedby performing at least some of the following processes: forming a holeextending through the second dielectric layer 232 to expose at least aportion of the upper boundary 222-1A of the horizontally extendingportion of the second capping layer 222; forming a metal (e.g., Cu)layer over the second dielectric layer 232 to refill the hole with themetal layer; and performing a CMP process to re-expose an upper boundaryof the second dielectric layer 232.

In some embodiments, the first electrode 212, the first capping layer208, the first electrode layer 216, the variable resistive materiallayer 218, the second electrode layer 220, the second capping layer 222,and the second electrode 234 may form an RRAM resistor, wherein thefirst electrode 212 serves as a bottom electrode and the secondelectrode 234 serves as a top electrode of the RRAM resistor,respectively. In some embodiments, such an RRAM resistor is coupled totransistor 204 so as to form a 1-transistor-1-resistor (1T1R) RRAM bitcell, wherein the RRAM resistor functions as the data storage componentand the transistor 204 functions as the access transistor of the 1T1RRRAM bit cell. In some other embodiments, the RRAM resistor may becoupled to the transistor 204 through respective conductive structuresdisposed in the one or more IMD layers (not shown) sandwiched betweenthe substrate 202 and the first dielectric layer 206, as discussedabove. It is noted the respective active area of the RRAM resistor ofthe disclosed RRAM device 200 is substantially increased while remainingthe occupied horizontal area unchanged. For example, the active area ofthe RRAM resistor of the disclosed RRAM device 200 is increased byadding respective vertically extending portions (218-2 and 218-3 of FIG.2J) of the variable resistive material layer 218 to couple at least thebottom electrode 212 while keeping horizontal area (or pitch)substantially unchanged. As such, within a given area of the disclosedRRAM device 200, the number of RRAM resistors that can be integratedinto the RRAM device 200 may be substantially increased withoutsacrificing each RRAM resistor's performance (because the respectiveactive area does not shrink).

In an embodiment, a memory cell includes: a first electrode comprising atop boundary and a sidewall; a resistive material layer, disposed abovethe first electrode, that comprises at least a first portion and asecond portion coupled to a first end of the first portion; and a secondelectrode disposed above the resistive material layer, wherein the firstportion of the resistive material layer extends along the top boundaryof the first electrode and the second portion of the resistive materiallayer extends along an upper portion of the sidewall of the firstelectrode.

In another embodiment, a memory device includes: a first electrodepartially embedded in a first dielectric layer; a resistive materiallayer conformally disposed over the protruding portion of the firstelectrode and a top surface of the first dielectric layer; and a secondelectrode disposed above the resistive material layer, wherein theresistive material layer includes a first portion sandwiched between thefirst and second electrodes.

Yet in another embodiment, a method includes: forming a first electrodecomprising a top boundary and upper sidewalls that extend above a topboundary of a first dielectric layer; forming a resistive material layerthat comprises a first portion extending along the upper sidewalls, asecond portion coupled to one end of the first portion, and a thirdportion coupled to the other end of the first portion; and forming asecond electrode extending through a second dielectric layer thatoverlays the first dielectric layer, wherein the second portion of theresistive material layer is sandwiched between the first and secondelectrodes.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A memory cell, comprising: a first dielectriclayer; a second dielectric layer disposed over the first dielectriclayer; a first electrode formed in the first dielectric layer andextending into the second dielectric layer, the first electrodecomprising a top boundary, a first sidewall, a second sidewall and abottom boundary; a first capping layer formed to surround the topboundary, the first sidewall, the second sidewall and the bottomboundary of the first electrode; and a variable resistance materiallayer, disposed above the first capping layer.
 2. The memory cell ofclaim 1, wherein the variable resistance material layer comprises atleast a first portion, a second portion coupled to a first end of thefirst portion and a third portion coupled to a second end of the firstportion, the second end opposite the first end, wherein the firstportion of the resistive material layer extends above and parallel tothe top boundary of the first electrode and the second portion of theresistive material layer extends parallel to the first sidewall of thefirst electrode and the third portion of the resistive material layerextends parallel to the second sidewall of the first electrode.
 3. Thememory cell of claim 1, further comprising a second electrode disposedof the variable resistance material layer, wherein the first portion ofthe resistive material layer is disposed between a bottom boundary ofthe second electrode and the top boundary of the first electrode.
 4. Thememory cell of claim 3, wherein the first and second electrodes eachcomprises a via structure.
 5. The memory cell of claim 4, wherein thefirst and second electrodes are disposed at a same tier.
 6. The memorycell of claim 1, further comprising: a first electrode layer disposedabove the first capping layer, wherein the first capping layer and thefirst electrode layer are disposed between the first electrode and thevariable resistance material layer.
 7. The memory cell of claim 6,further comprising: a second capping layer extending parallel to the topboundary and parallel to the first and second sidewalls of the firstelectrode; and a second electrode layer extending parallel to the topboundary and parallel to the first and second sidewalls of the firstelectrode, wherein the second capping layer and the second electrodelayer are disposed between the resistive material layer and a secondelectrode disposed above the second capping layer.
 8. A memory cell,comprising: a first dielectric layer; a second dielectric layer disposedover the first dielectric layer; a first electrode formed in the firstdielectric layer and extending into the second dielectric layer, thefirst electrode comprising a top boundary, a first sidewall, a secondsidewall and a bottom boundary; a first capping layer formed to surroundthe top boundary, the first sidewall, the second sidewall and the bottomboundary of the first electrode; and a resistive material layerconformally disposed over the protruding portion of the first electrodeand a top surface of the first dielectric layer; and a second electrodedisposed above the resistive material layer.
 9. The memory cell of claim8, wherein the resistive material layer presents a variable resistancevalue and wherein the resistive material layer includes a first portionsandwiched between the first and second electrodes, a second portionextending parallel to a first side surface of the first electrode and athird portion extending parallel to a second side surface of the firstelectrode.
 10. The memory cell of claim 8, further comprising: a spacerdisposed along a sidewall of the protruding portion of the firstelectrode and further over the top surface of the first dielectriclayer.
 11. The memory cell of claim 8, further comprising: a seconddielectric layer disposed over the first dielectric layer, wherein thesecond electrode extends through the second dielectric layer.
 12. Thememory cell of claim 11, wherein the first and second dielectric layersare formed of a substantially similar material.
 13. The memory cell ofclaim 8, wherein the first and second electrodes each comprises a viastructure.
 14. The memory cell of claim 8, further comprising: a firstelectrode layer extending along the top boundary and sidewalls of thefirst electrode, wherein the first capping layer and the first electrodelayer are disposed between the first electrode and the resistivematerial layer.
 15. The memory cell of claim 14, further comprising: asecond capping layer extending along the top boundary and sidewalls ofthe first electrode; and a second electrode layer extending along thetop boundary and sidewalls of the first electrode, wherein the secondcapping layer and the second electrode layer are disposed between theresistive material layer and the second electrode.
 16. A method,comprising: forming a first dielectric layer; forming a seconddielectric layer over the first dielectric layer; forming a firstelectrode in the first dielectric layer and extending into the seconddielectric layer, the first electrode comprising a top boundary, a firstsidewall, a second sidewall and a bottom boundary; forming a firstcapping layer to surround the top boundary, the first sidewall, thesecond sidewall and the bottom boundary of the first electrode; forminga resistive material layer over the first capping layer.
 17. The methodof claim 16, further comprising: forming a second electrode extendingthrough a second dielectric layer that overlays the first dielectriclayer, wherein the first portion of the resistive material layer issandwiched between the first and second electrodes
 18. The method ofclaim 16, further comprising: forming a first spacer disposed adjacentthe first upper sidewall of the first electrode in the second dielectriclayer; and forming a second spacer disposed adjacent the second uppersidewall of the first electrode in the second dielectric layer.
 19. Themethod of claim 16, further comprising: forming a first electrode layerabove the first capping layer, wherein the first capping layer and thefirst electrode layer are disposed between the first electrode and theresistive material layer.
 20. The method of claim 19, furthercomprising: forming a second electrode layer above the resistivematerial layer; and forming a second capping layer above the secondelectrode layer, wherein the second capping layer and the secondelectrode layer are disposed between the resistive material layer andthe second electrode.